RF2304 RF Micro Devices, RF2304 Datasheet

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RF2304

Manufacturer Part Number
RF2304
Description
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5GHz. With +6dBm
output power, it may also be used as a driver in transmit-
ter applications, or in highly linear receivers. The device is
packaged in an 8-lead plastic package and is self-con-
tained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
Optimum Technology Matching® Applied
Rev A5 010717
Typical Applicat ions
• Receive or Transmit Low-Noise Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
Si BJT
Si Bi-CMOS
RF IN
GND
GND
GND
Funct ional Block Diagram
1
2
3
4
GaAs HBT
SiGe HBT
4
ü
GaAs MESFET
Si CMOS
8
7
6
5
NC
VDD
RF OUT
GND
GENERAL PURPOSE LOW-NOISE AMPLIFIER
• Portable Battery Powered Equipment
• Wireless LAN
• ISM Band Applications
Feat ures
Ordering Infor mat ion
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 2.7V to 6.0V Supply
• 6dBm Output Power
• 8dB Small Signal Gain at 900MHz
• 1.8dB Noise Figure at 900MHz
• Low DC Current Consumption of 5mA
• 300MHz to 2500MHz Operation
RF2304
RF2304 PCBA
8° MAX
0° MIN
0.196
0.189
xxxxx
xxxxx
xxxxx
0.034
0.016
Package St yle: SOIC-8
General Purpose Low-Noise Amplifier
Fully Assembled Evaluation Board
0.157
0.150
0.244
0.229
Dimensions in mm
0.009
0.007
0.050
0.018
0.014
RF2304
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
3. Lead coplanarity -
mold flash.
0.005 with respect to datum "A".
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
0.008
0.004
0.068
0.053
-A-
4-57
4

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RF2304 Summary of contents

Page 1

... FDD and TDD Communication Systems • Commercial and Consumer Systems Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2 ...

Page 2

... RF2304 Absolute Maximum Ratings Parameter Supply Voltage ( Current Input RF Power Operating Ambient Temperature Storage Temperature Parameter 4 Operating Range Overall Frequency Range Supply Voltage Operating Current ( Operating Ambient Temperature 3V Performance Gain Gain Noise Figure Input IP3 OP1dB Gain Noise Figure ...

Page 3

... This pin sinks approxi- mately 600 A when connected to V when grounded connection. 100 Rev A5 010717 , and sources less than Applicat ion Schemat RF2304 Interface Schematic OUT Choke 100 pF 4-59 4 ...

Page 4

... RF2304 P1 P1-1 1 VCC 2 GND 100 pF 50 strip 4-60 Evaluat ion Board Schemat ic (Download Bill of Materials from www.rfmd.com 2304400B Evaluation Board Layout 1.43” x 1.43” P1 strip J2 RF OUT C2 100 pF Rev A5 010717 ...

Page 5

... Typical Characteristics - f=900MHz Typical Characteristics - 500 Rev A5 010717 Gain P1dB Idd NF 3.5 4 Vdd (V) DD 1000 1500 2000 Frequency (MHz) RF2304 4.5 5 =5. 2500 3000 4-61 4 ...

Page 6

... GHz S-Parameter Conditions: All plots are taken at ambient temperature=25° C. NOTE: All S11 and S22 plots shown were taken from an RF2304 evaluation board with external input and output tuning compo- nents removed and the reference points at the RF IN and RF OUT pins. 4- ...

Page 7

... Vcc=5V 8.5 8.0 7.5 7.0 6.5 6.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 12.0 Vcc=3V 11.5 Vcc=5V 11.0 10.5 10.0 9.5 9.0 8.5 8.0 7.5 7.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 21.0 Vcc=3V 20.5 Vcc=5V 20.0 19.5 19.0 18.5 18.0 17.5 17.0 60.0 80.0 100.0 -60.0 -40.0 -20.0 RF2304 IIP3 versus Temperature Frequency = 900 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) I versus Temperature CC Frequency = 900 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) IIP3 versus Temperature Frequency = 1950 MHz Vcc=3V Vcc=5V 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) 4-63 4 ...

Page 8

... RF2304 OP1dB versus Temperature Frequency = 1950 MHz 11.0 10.0 9.0 8.0 7.0 4 6.0 5.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) Gain versus Temperature Frequency = 2450 MHz 9.5 9.0 8.5 8.0 7.5 7.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) OP1dB versus Temperature Frequency = 2450 MHz 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 -60.0 -40.0 -20.0 0.0 20.0 Temperature (°C) 4-64 12.0 Vcc=3V 11.5 Vcc=5V 11.0 10.5 10.0 9.5 9.0 8.5 8.0 40.0 60.0 80.0 100.0 -60.0 -40.0 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 Vcc=3V 17.5 Vcc=5V 17.0 40.0 60.0 80.0 100.0 -60.0 -40.0 12.0 Vcc=3V 11.5 Vcc=5V 11.0 10.5 10.0 9.5 9.0 8.5 8.0 7.5 7.0 40.0 60.0 80.0 100.0 -60.0 -40.0 I versus Temperature CC Frequency = 1950 MHz Vcc=3V Vcc=5V -20 ...

Page 9

... Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25° C -18.0 -18.2 -18.4 -18.6 -18.8 -19.0 -19.2 0.0 500.0 1000.0 1500.0 Frequency (MHz) Rev A5 010717 S22 of Evaluation Board versus Frequency 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Vcc=3V 0.2 Vcc=5V 0.0 2000.0 2500.0 0.0 500.0 Vcc=3.0V Vcc=5.0V 2000.0 2500.0 RF2304 Temperature = +25° C Vcc=3.0V Vcc=5.0V 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) 4-65 4 ...

Page 10

... RF2304 4 4-66 Rev A5 010717 ...

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