UPA1478H NEC, UPA1478H Datasheet

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UPA1478H

Manufacturer Part Number
UPA1478H
Description
Silicon transistor array
Manufacturer
NEC
Datasheet

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Part Number:
UPA1478H
Manufacturer:
NEC
Quantity:
20 000
Document No. IC-3566
Date Published November 1994 P
Printed in Japan
(O.D. No. IC-6634)
DESCRIPTION
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage V
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The
Surge Absorber (Zener Diode) built in.
Easy mount by 0.1 inch of terminal interval.
High h
PA1478H
PA1478 is NPN silicon epitaxial Darlington
FE
300 s, Duty Cycle
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
for Darlington Transistor.
a
c
= 25 ˚C
= 25 ˚C
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
V
V
E
I
I
P
P
T
T
C(DC)
C(pulse)
CEO (SUS)
T1
T2
J
stg
10 %
CBO
CEO
EBO
**
***
*
–55 to +150 ˚C
Quality Grade
DATA SHEET
31 4
31 4
INDUSTRIAL USE
150
Standard
3.5
40
28
7
A
2
4
= 25 ˚C)
mJ/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
(B)
2
1
1.4
1 2 3 4 5 6 7 8 9 10
3
R
26.8 MAX.
0.6 ±0.1
1
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
R
2
(in millimeters)
(C)
(E)
5
6
2.54
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
7
1
2
PA1478
= 10 k
= 500
.
.
.
.
8
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
©
9
0.5 ±0.1
1.4
10
1994

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UPA1478H Summary of contents

Page 1

... FE ORDERING INFORMATION Part Number Package PA1478H 10 Pin SIP Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage V ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO Collector to Emitter V CEO(SUS) Sustaining Voltage DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (T A DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1478 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 100 T - Ambient Temperature - ˚ CURRENT GAIN vs. COLLECTOR CURRENT ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 10 1 0.1 0 Pulse Width - ms 4 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 2 1.6 1.2 0.8 0.4 100 0 1 Collector to ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1478 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 ...

Page 6

... The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ...

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