UPA1721G-E2 NEC, UPA1721G-E2 Datasheet

UPA1721G-E2

Manufacturer Part Number

UPA1721G-E2

Description

N-channel enhancement type power MOS FET

Manufacturer

NEC

Datasheet

1.UPA1721G-E2.pdf (8 pages)

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•

Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

Transistor designed for DC/DC converters and power

management applications of notebook computers.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

PA1721 is N-Channel MOS Field Effect

iss

PA1721G

G13889EJ1V0DS00 (1st edition)

November 1999 NS CP(K)

= 10.5 m

= 14.0 m

= 17.0 m MAX. (V

: C

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

iss

= 2200 pF TYP.

10 s, Duty Cycle

MAX. (V

Note1

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

= 4.0 V, I

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

Note2

1 %

The mark

= 5.0 A)

= 25°C, All terminals are connected.)

= 5.0 A)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

–55 to +150

shows major revised points.

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

150

±20

±10

±40

2.0

°C

PACKAGE DRAWING (Unit : mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1,2,3

5,6,7,8

0.5 ±0.2

6.0 ±0.3

PA1721

4.4

; Source

; Gate

; Drain

Source

Drain

Body

Diode

0.8

0.10

1998,1999

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UPA1721G-E2 Summary of contents

Page 1

... Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS 5.0 A DS(on 4 5.0 A DS(on 4 5.0 A DS(on ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse D(DC) ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 T = 150˚ 75˚C 25˚C 25˚ Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.1 0.1 1 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 100 150 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...

Page 6

Data Sheet G13889EJ1V0DS00 PA1721 ...

Page 7

Data Sheet G13889EJ1V0DS00 PA1721 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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