2SC1623-T1B NEC, 2SC1623-T1B Datasheet

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2SC1623-T1B

Manufacturer Part Number
2SC1623-T1B
Description
Silicon transistor
Manufacturer
NEC
Datasheet

Specifications of 2SC1623-T1B

Dc
N/A
Document No. TC-1481C
Date Published July 1995 P
Printed in Japan
(O.D. No. TC-5172C)
FEATURES
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (T
* Pulsed: PW
h
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
• High DC Current Gain: h
• High Voltage: V
Maximum Voltages and Current (TA = 25 ˚C)
Maximum Power Dissipation
Maximum Temperatures
Marking
Classification
(V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
h
at 25 ˚C Ambient Temperature P
FE
CHARACTERISTIC
CE
= 6.0 V, I
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
90 to 180
350 s, Duty Cycle
C
L4
= 1.0 mA)
CEO
NPN SILICON EPITAXIAL TRANSISTOR
= 50 V
135 to 270
FE
SYMBOL
V
V
= 200 TYP.
L5
I
I
CE(sat)
BE(sat)
V
C
h
CBO
EBO
f
FE
BE
T
ob
A
2 %
= 25 ˚C)
V
V
V
I
T
T
C
DATA SHEET
T
j
stg
CBO
CEO
EBO
MIN.
0.55
200 to 400
90
MINI MOLD
–55 to +150 ˚C
L6
100
200
150
5.0
60
50
TYP.
0.15
0.86
0.62
200
250
3.0
300 to 600
mW
mA
˚C
V
V
V
L7
MAX.
0.65
600
0.1
0.1
0.3
1.0
SILICON TRANSISTOR
UNIT
MHz
PACKAGE DIMENSIONS
1: Emitter
2: Base
3: Collector
pF
V
V
V
A
A
in millimeters
V
V
V
I
I
V
V
V
2
1
C
C
CB
EB
CE
CE
CE
CB
= 100 mA, I
= 100 mA, I
2SC1623
= 60 V, I
= 5.0 V, I
= 6.0 V, I
= 6.0 V, I
= 6.0 V, I
= 6.0 V, I
2.8 ± 0.2
TEST CONDITIONS
1.5
E
Marking
C
C
C
E
E
= 0
B
B
= 0
= 1.0 mA*
= 1.0 mA*
= –10 mA
= 0, f = 1.0 MHz
©
3
= 10 mA*
= 10 mA*
0.65
+0.1
–0.15
1984

Related parts for 2SC1623-T1B

2SC1623-T1B Summary of contents

Page 1

... FE V 0.15 0.3 CE(sat) V 0.86 1.0 BE(sat) V 0.55 0.62 0. 250 135 to 270 200 to 400 300 to 600 SILICON TRANSISTOR 2SC1623 PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 +0.1 1.5 0.65 –0. Marking 1: Emitter 2: Base 3: Collector UNIT TEST CONDITIONS 5 6 1.0 mA* ...

Page 2

... V CE 1000 500 300 = 6.0 V 1.0 V 100 0 100 0.1 0.2 2SC1623 100 120 140 160 - Ambient Temperature - ˚ Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT Pulsed ˚ ˚C –25 ˚C ...

Page 3

... RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 100 200 1000 h - Small Signal Current Gain fe 2SC1623 Pulsed · BE(sat · CE(sat 100 - Collector Current - 1.0 MHz 1 2 ...

Page 4

... I - Collector Current - NORMALIZED h-PARAMETER vs. COLLECTOR TO EMITTER VOLTAGE 2SC1623 1.0 kHz Collector to Emitter Voltage - V ...

Page 5

... [MEMO] 2SC1623 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SC1623 M4 94.11 ...

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