2SC3356 NEC, 2SC3356 Datasheet
2SC3356
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2SC3356 Summary of contents
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... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP TYP ...
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... 1.0 GHz 0 50 0.5 1 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 2SC3356 f = 1.0 MHz -Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT -Collector Current- max 21e 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz ...
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... 16.516 108.7 0.035 8.928 92.1 0.060 6.022 83.0 0.085 4.633 76.2 0.109 3.744 69.9 0.136 3.193 65.7 0.160 2.750 58.8 0.187 2.479 55.5 0.212 2.185 50.1 0.238 2.016 47.8 0.254 2SC3356 f = 1.0 GHz 21e 59.2 0.735 28.1 54.4 0.550 34.1 56.0 0.468 33.9 59.1 0.426 33 ...
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... R ) 0.2 GHz –––– 22e 0.2 GHz 0.2 GHz 120 60 30 150 0 180 150 60 120 2SC3356 50 S -FREQUENCY 12e CONDITION 2.0 GHz 60 S 12e 30 0.2 GHz 0 0.05 0.1 0.15 0.2 0. ...
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... [MEMO] 2SC3356 5 ...
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... [MEMO] 6 2SC3356 ...
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... [MEMO] 2SC3356 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC3356 M4 96. 5 ...