UPA1706G NEC, UPA1706G Datasheet

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UPA1706G

Manufacturer Part Number
UPA1706G
Description
UPA1706GSWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
查询PA1706供应商
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. V
This product is N-Channel MOS Field Effect Transistor
Super Low on-resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. V
3. PW
4. Mounted on ceramic substrate of 1200 mm
iss
PA1706G
G13083EJ1V0DS00 (1st edition)
January 1999 NS CP(K)
= 5.8 m
= 7.0 m
= 8.0 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
GS
DS
iss
= 0 V
= 0 V
= 3000 pF (TYP.)
10 s, Duty Cycle
(TYP.) (V
(TYP.) (V
(TYP.) (V
Note3
Note2
Note1
A
The information in this document is subject to change without notice.
= 25°C)
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 4.0 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note4
1 %
D
A
D
D
= 7.0 A)
= 7.0 A)
= 7.0 A)
= 25°C, All terminals are connected)
INDUSTRIAL USE
I
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
SWITCHING
2
–55 to + 150
x 0.7mm
MOS FIELD EFFECT TRANSISTOR
±20
±13
±52
150
2.0
30
8
1
°C
°C
5.37 MAX.
W
PACKAGE DRAWING (Unit : mm)
V
V
A
A
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
1,2,3
4
5,6,7,8
Gate
Gate
Protection
Diode
0.5 ±0.2
6.0 ±0.3
4.4
PA1706
; Source
; Gate
; Drain
Source
Drain
©
0.8
Body
Diode
0.10
1998

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UPA1706G Summary of contents

Page 1

... Duty Cycle 4. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle 25°C, All terminals are connected) A SYMBOL TEST CONDITIONS 7.0 A DS(on 4 7.0 A DS(on 4 7.0 A DS(on ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 T = 125˚ 75˚C 25˚C -25˚C 1 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 100 TA = 25˚C 25˚C 75˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -40 - 100 ...

Page 6

Data Sheet G13083EJ1V0DS00 PA1706 ...

Page 7

Data Sheet G13083EJ1V0DS00 PA1706 7 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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