MG1200FXF1US51 TOSHIBA Semiconductor CORPORATION, MG1200FXF1US51 Datasheet - Page 2

• Manufacturer Part Number: MG1200FXF1US51
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Thermal Resistance
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Forward voltage of diode
Reverse recovery charge
Peak reverse recovery current
Switching dissipation
Thermal Resistance
Note 1: Toshiba silicone’s YG6260 heat radiation grease is recommended for use with semiconductor devices.
Apply a thin, even (100-to-200-mm) coating of grease.
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
turn-on loss
turn-off loss
Diode reverse
recovery loss
(T
c
= = = = 25°C)
(T
vj
= = = = 125°C)
V
V
Symbol
Symbol
R
R
GE (off)
CE (sat)
I
E
I
C
th (c-f)
th (j-c)
GES
E
E
CES
Q
t
t
V
I
dsw
t
on
off
ies
t
rr
on
off
r
f
F
rr
V
V
V
I
V
V
V
RG (on)/(off) = 3.9/3.3 W
(dic/dt (on) ~ - 4900 A/ms)
(Inductive load, L
I
I
di
V
V
V
RG (on)/(off) = 3.9/3.3 W
(dic/dt (on) ~ - 4900 A/ms)
(Inductive load, L
I
di
V
Transistor (IGBT) stage
Diode stage
Per module
C
F
F
F
GE
CE
CE
CE
CC
GG
CC
CC
GG
CC
F
F
= 1200 A, V
= 1200 A, V
= 1200 A, V
= 1200 A, V
/dt ~ - -4900 A/ms,
/dt ~ - -4900 A/ms,
2
= 3300 V, V
= 5 V, I
= 10 V, V
= ±20 V, V
= 1800 V, I
= 1800 V
= 1800 V, I
= 1800 V
= ±15 V, C
= ±15 V, C
Test Condition
Test Condition
C
= 1.2 A
GE
GE
GG
GG
GE
CE
C
GE
C
GE
GE
s
s
= 0 V, f = 100 kHz
= 0 V
= 15 V
= 1200 A,
= -15 V,
= 1200 A,
= -15 V,
~ - 160 nH)
~ - 160 nH)
= 0 V
= 0.1 mF,
= 0.1 mF,
= 0 V
(Note 1)
MG1200FXF1US51
Min
Min
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
1000
1500
Typ.
Typ.
230
4.4
4.6
2.1
0.3
4.0
1.8
3.5
2.2
2.0
1.0
6.0
75
¾
¾
¾
2001-09-05
Max
Max
16.0
±50
100
5.3
4.0
2.8
3.0
1.5
8.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
°C/kW
Unit
Unit
mA
mC
nA
nF
ms
ms
ms
ms
V
V
V
A
J
J
J