MIG150J7CSB1W TOSHIBA Semiconductor CORPORATION, MIG150J7CSB1W Datasheet - Page 9

• Manufacturer Part Number: MIG150J7CSB1W
• Description: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.005
0.003
0.001
0.05
0.03
0.01
400
300
200
100
120
100
0.5
0.3
0.1
80
60
40
20
0.001
0
1
0
0
0
Tc = 25°C
25
5
Case temperature T C
0.01
Carrier frequency f
R
th (t)
Pulse width tw (s)
50
Inverter stage
Brake stage
– tw Inverter stage
10
I
OC – T
D (L)
75
0.1
– f
Diode stage
Transistor stage
C
c
15
c
100
V D = 15 V
Tj = 25°C
(kHz)
V D = 15 V
(°C)
1
20
125
150
10
25
9
0.005
0.003
0.001
0.05
0.03
0.01
280
240
200
160
120
0.5
0.3
0.1
30
25
20
15
10
80
40
0.001
5
0
0
1
0
0
Tj < = 125°C
V D = 15 V
Tc = 25°C
100
Collector-emitter voltage V CE
5
0.01
Carrier frequency f
R
200
th (t)
Reverse bias SOA
Pulse width tw (s)
OC
10
– tw Brake stage
I
300
D (H)
0.1
– f
400
MIG150J7CSB1W
15
c
Transistor stage
c
V D = 15 V
Tj = 25°C
Diode stage
(kHz)
500
1
20
(V)
600
2001-11-13
700
25
10