IXFN80N50Q2 IXYS Corporation, IXFN80N50Q2 Datasheet
IXFN80N50Q2
Manufacturer Part Number
IXFN80N50Q2
Description
Manufacturer
IXYS Corporation
Datasheet
1.IXFN80N50Q2.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN80N50Q2
Manufacturer:
WESTINGHOUSE
Quantity:
228
Part Number:
IXFN80N50Q2
Quantity:
123
© 2003 IXYS All rights reserved
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V V V V V
V V V V V
I
I
R
D25
DM
AR
GSS
DSS
J
stg
DGR
GS
GSM
AR
D
JM
ISOL
DSS
AS
d
DS(on)
D S S
D S S
D S S
D S S
D S S
GS(th)
GS(th)
GS(th)
GS(th)
GS(th)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
V
Test Conditions
V
V
S
V
V
Note 1
C
C
C
C
C
C
J
J
J
GS
V
GS
GS
GS
DS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= 10 V, I
= ±30 V, V
= V
= 0 V
DM
= V
, di/dt ≤ 100 A/µs, V
DSS
rr
TM
G S
D
, I
= 1mA
D
D
= 0.5 • I
G
= 8mA
DS
= 2 Ω
= 0
g
, Low Intrinsic R
D25
GS
= 1 MΩ
DD
Advance Technical Information
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
= 25°C
DSS
= 125°C
JM
IXFN 80N50Q2
g
min.
5 0 0
2 . 5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
500
500
±30
±40
320
890
150
5.0
80
80
60
20
30
max.
±200 nA
100 µA
5.0 V
60 mΩ
5 mA
V/ns
mJ
°C
°C
°C
W
V
V
V
V
A
A
A
V
g
J
V
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
D25
rr
Double metal process for low
miniBLOC, with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
gate resistance
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
≤ ≤ ≤ ≤ ≤ 250 ns
= 500 V
= 80
= 60 mΩ Ω Ω Ω Ω
G
D = Drain
S
DS99031A(06/03)
D
A
S
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IXFN80N50Q2 Summary of contents
Page 1
HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g High dV/dt, Low t rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...