MG400Q1US65H TOSHIBA Semiconductor CORPORATION, MG400Q1US65H Datasheet - Page 5

• Manufacturer Part Number: MG400Q1US65H
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
1600
1200
0.1
0.001
800
400
1
0
6
5
4
3
2
1
0
0
0
Tc = 25°C
Common emitter
R L = 1.5 Ω
Tc = 25°C
V CC < = 900 V
T j < = 125°C
t w = 5 µ s
200
Collector-emitter voltage V
800
0.01
V CE = 0
400
200 V 400 V 600 V
Pulse width t
Charge Q
Short circuit SOA
V
1600
CE
R
600
, V
th (t)
0.1
GE
– t
G
800
2400
– Q
w
w
Diode stage
Transistor stage
(nC)
G
(s)
1000
CE
1
3200
(V)
1200
10
4000
1400
16
12
8
4
5
100000
10000
1000
1000
100
100
0.1
10
0.01
1
0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
T j < = 125°C
V GE = ± 15 V
R G = 2.4 Ω
Collector-emitter voltage V
Collector-emitter voltage V
0.1
500
Reverse bias SOA
C – V
1
CE
MG400Q1US65H
Cres
1000
CE
CE
C ies
C oes
10
(V)
(V)
2003-12-19
1500
100