MG100Q2YK1 TOSHIBA Semiconductor CORPORATION, MG100Q2YK1 Datasheet - Page 5

• Manufacturer Part Number: MG100Q2YK1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
1600
1200
0.1
10
800
400
0.001
1
0
6
5
4
3
2
1
0
0
0
Tc = 25°C
Common emitter
R L = 6 W
Tc = 25°C
V CC < = 900 V
T j < = 125°C
t w = 5 ms
200
Collector-emitter voltage V
200
0.01
V CE = 0
400
200 V
Pulse width t
Short circuit SOA
Charge Q
V
CE
400
400 V
R
600
, V
th (t)
600 V
0.1
GE
G
– t
800
– Q
600
w
w
Transistor stage
(nC)
Diode stage
G
(s)
1000
CE
1
800
(V)
1200
10
1000
1400
16
12
8
4
5
100000
10000
1000
1000
100
100
0.1
10
0.01
1
0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
T j < = 125°C
V GE = ±15 V
R G = 9.1 W
200
Collector-emitter voltage V
Collector-emitter voltage V
0.1
400
Reverse bias SOA
600
C – V
1
CE
800
MG100Q2YS65H
1000
Cres
CE
CE
10
C ies
C oes
(V)
(V)
1200
2002-10-04
1400
100