BGD502,112 NXP Semiconductors, BGD502,112 Datasheet

AMP GAIN POWER 550MHZ SOT115J

BGD502,112

Manufacturer Part Number
BGD502,112
Description
AMP GAIN POWER 550MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
Power Amplifierr
Datasheet

Specifications of BGD502,112

Operating Frequency
550 MHz
Supply Current
435 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Frequency (max)
550MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933793490112::BGD502::BGD502
Product specification
Supersedes data of 1995 Oct 25
dbook, halfpage
DATA SHEET
BGD502
550 MHz, 18.5 dB gain power
doubler amplifier
DISCRETE SEMICONDUCTORS
M3D252
2001 Nov 15

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BGD502,112 Summary of contents

Page 1

DATA SHEET dbook, halfpage BGD502 550 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1995 Oct 25 DISCRETE SEMICONDUCTORS M3D252 2001 Nov 15 ...

Page 2

... NXP Semiconductors 550 MHz, 18.5 dB gain power doubler amplifier FEATURES  Excellent linearity  Extremely low noise  Silicon nitride passivation  Rugged construction  TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range 550 MHz at a voltage supply (DC) ...

Page 3

... NXP Semiconductors 550 MHz, 18.5 dB gain power doubler amplifier CHARACTERISTICS Table 1 Bandwidth 40 to 550 MHz; V SYMBOL PARAMETER G power gain p SL slope cable equivalent FL flatness of frequency response s input return losses 11 s output return losses 22 s phase response 21 CTB composite triple beat X cross modulation ...

Page 4

... NXP Semiconductors 550 MHz, 18.5 dB gain power doubler amplifier Table 2 Bandwidth 40 to 450 MHz; V SYMBOL PARAMETER G power gain p SL slope cable equivalent FL flatness of frequency response s input return losses 11 s output return losses 22 s phase response 21 CTB composite triple beat CSO composite second order distortion ...

Page 5

... NXP Semiconductors 550 MHz, 18.5 dB gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS (mm are the original dimensions UNIT b c max. max. max. 0.51 mm 20.8 9 ...

Page 6

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 7

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 8

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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