BGD502,112 NXP Semiconductors, BGD502,112 Datasheet - Page 5

AMP GAIN POWER 550MHZ SOT115J

BGD502,112

Manufacturer Part Number
BGD502,112
Description
AMP GAIN POWER 550MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
Power Amplifierr
Datasheet

Specifications of BGD502,112

Operating Frequency
550 MHz
Supply Current
435 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Frequency (max)
550MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933793490112::BGD502::BGD502
NXP Semiconductors
PACKAGE OUTLINE
2001 Nov 15
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
550 MHz, 18.5 dB gain power doubler
amplifier
DIMENSIONS (mm are the original dimensions)
UNIT
mm 20.8
OUTLINE
VERSION
SOT115J
max.
A
A 2
U 1
L
B
max.
9.5
A 2
c
0.51
0.38
b
d
0.25 27.2
c
U 2
E
IEC
max.
D
Q
2.04
2.54
d
p
13.75 2.54 5.08 12.7 8.8
max.
E
q
JEDEC
e
y
REFERENCES
M
e 1
A
B
F
F
0
S
min.
L
JEITA
scale
4.15
3.85
5
5
p
max.
2.4 38.1 25.4 10.2 4.2 44.75
W
10 mm
Q
q
Z
1
q 1
2
3
q 2
e
e 1
S
q 2
q 1
D
5
44.25
U 1
PROJECTION
EUROPEAN
p
7
8.2
7.8
U 2
b
8
y
9
UNC
6-32
M
W
B
0.25
Product specification
w
w
x
ISSUE DATE
0.7
x
M
04-02-04
10-06-18
BGD502
M
B
0.1
SOT115J
y
max.
3.8
Z

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