AT32UC3A364S Atmel Corporation, AT32UC3A364S Datasheet - Page 224
AT32UC3A364S
Manufacturer Part Number
AT32UC3A364S
Description
Manufacturer
Atmel Corporation
Datasheets
1.AT32UC3A0128.pdf
(377 pages)
2.AT32UC3A0128.pdf
(33 pages)
3.AT32UC3A0128.pdf
(159 pages)
4.AT32UC3A3128.pdf
(91 pages)
5.AT32UC3A3128.pdf
(1012 pages)
Specifications of AT32UC3A364S
Flash (kbytes)
64 Kbytes
Pin Count
144
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
110
Ext Interrupts
110
Usb Transceiver
1
Usb Speed
Hi-Speed
Usb Interface
Device + OTG
Spi
6
Twi (i2c)
2
Uart
4
Lin
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
16
Temp. Sensor
No
Crypto Engine
AES
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0 to 3.6
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
18
Input Capture Channels
12
Pwm Channels
12
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT32UC3A364S-ALUT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- AT32UC3A0128 PDF datasheet
- AT32UC3A0128 PDF datasheet #2
- AT32UC3A0128 PDF datasheet #3
- AT32UC3A3128 PDF datasheet #4
- AT32UC3A3128 PDF datasheet #5
- Current page: 224 of 1012
- Download datasheet (16Mb)
Figure 16-4. Write Burst, 16-bit SDRAM Access
16.7.3
32072G–11/2011
SDRAMC_A[12:0]
D[15:0]
SDWE
SDCS
SDCK
SDRAM Controller Read Cycle
RAS
CAS
The SDRAMC allows burst access, incremental burst of unspecified length or single access. In
all cases, the SDRAMC keeps track of the active row in each bank, thus maximizing perfor-
mance of the SDRAM. If row and bank addresses do not match the previous row/bank address,
then the SDRAMC automatically generates a precharge command, activates the new row and
starts the read command. To comply with the SDRAM timing parameters, additional clock cycles
on SDCK are inserted between precharge and active (t
read (t
read command, additional wait states are generated to comply with the CAS latency (one, two,
or three clock delays specified in the CR register).
For a single access or an incremented burst of unspecified length, the SDRAMC anticipates the
next access. While the last value of the column is returned by the SDRAMC on the bus, the
SDRAMC anticipates the read to the next column and thus anticipates the CAS latency. This
reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
Row n
t
RCD
RCD
= 3
) commands. These two parameters are set in the CR register of the SDRAMC. After a
Col a
Dna
Col b
Dnb
Col c
Dnc
Col d
Dnd
Col e
Dne
Col f
Dnf
Col g
Dng
RP
) commands and between active and
Col h Col i
Dnh
Dni
Col j
Dnj
Col k
Dnk
Col l
Dnl
224
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