MCR08BT1 NXP Semiconductors, MCR08BT1 Datasheet - Page 3

Passivated, sensitive gate thyristor in a SOT223 plastic package

MCR08BT1

Manufacturer Part Number
MCR08BT1
Description
Passivated, sensitive gate thyristor in a SOT223 plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
MCR08BT1
Product data sheet
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
I
I
TSM
TSM
(A)
(A)
10
10
10
10
8
6
4
2
0
1
3
2
10
f = 50 Hz.
values
1
t
p
5
 10 ms.
All information provided in this document is subject to legal disclaimers.
10
10
4
Rev. 4 — 2 November 2011
10
10
2
3
T
I
T
t
j
p
initial = 25 C max
T
I
n
(s)
T
j
initial = 25 C max
MCR08BT1
t
p
Thyristor; logic level
t
p
© NXP B.V. 2011. All rights reserved.
I
001aac105
001aac106
TSM
I
TSM
t
t
10
10
3
2
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