BGE788C NXP Semiconductors, BGE788C Datasheet - Page 3

• Manufacturer Part Number: BGE788C
• Description: Hybrid high dynamic range amplifier module operating at a supply voltage of 24 V (DC)
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Characteristics
Table 5.
Bandwidth 40 MHz to 750 MHz; V
[1]
BGE788C
Product data sheet
Symbol
G
SL
FL
s
s

CTB
CSO
NF
I
tot
s21
11
22
p


2
2
The module normally operates at V
Characteristics
Parameter
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
composite second order
distortion
noise figure
total current consumption
B
= 24 V; T
B
= 24 V, but is able to withstand supply transients up to 30 V.
All information provided in this document is subject to legal disclaimers.
mb
= 30
Rev. 2 — 16 September 2011
Conditions
f = 50 MHz
f = 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 40 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 50 MHz
110 channels flat;
V
measured at 745.25 MHz
110 channels flat;
V
measured at 746.5 MHz
f = 50 MHz
o
o
= 44 dBmV;
= 44 dBmV;

C; Z
S
= Z
L
= 75

.
750 MHz, 34 dB gain push-pull amplifier
[1]
Min
33.2
33.5
0.3
-
16
15
14
16
15
14
135
-
-
-
285
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BGE788C
© NXP B.V. 2011. All rights reserved.
Max
35.2
-
2.3
0.6
-
-
-
-
225
49
52
8
-
-
325
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
mA
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