BGR269 NXP Semiconductors, BGR269 Datasheet

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BGR269

Manufacturer Part Number
BGR269
Description
High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC)
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
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Part Number:
BGR269
Manufacturer:
M/A-COM
Quantity:
5 000
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
High performance amplifier in a SOT115J package, operating at a voltage supply of
24 V (DC).
Table 1.
[1]
Symbol Parameter
G
I
tot
p
BGR269
200 MHz, 35 dB gain reverse amplifier
Rev. 6 — 5 August 2010
Excellent linearity
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
35 dB amplification up to 200 MHz
Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz
frequency range
The module normally operates at V
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
power gain
total current
Quick reference data
B
= 24 V, but is able to withstand supply transients up to V
Conditions
f = 5 MHz
f = 200 MHz
V
B
= 24 V
[1]
Min
34.5
35
145
Typ
35
-
160
Product data sheet
Max
35.5
36
175
B
= 35 V.
dB
mA
Unit
dB

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BGR269 Summary of contents

Page 1

... BGR269 200 MHz gain reverse amplifier Rev. 6 — 5 August 2010 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. ...

Page 2

... Limiting values Parameter Conditions RF input voltage mounting base temperature storage temperature range All information provided in this document is subject to legal disclaimers. Rev. 6 — 5 August 2010 BGR269 200 MHz gain reverse amplifier Simplified outline Symbol Min Max - 50 − ...

Page 3

... 198.5 MHz BGR269 Max Unit 35 0.6 dB +0.4 dB +0 +45 deg −42 dB −74 dB −68 dB −57 dB −66 dB −57 dB −50 dB −74 dB −74 dB − dBmV − ...

Page 4

... MHz gain reverse amplifier 8.2 6-32 44.25 7.8 UNC EUROPEAN PROJECTION BGR269 SOT115J max. 0.25 0.7 0.1 3.8 ISSUE DATE 04-02-04 10-06-18 © NXP B.V. 2010. All rights reserved ...

Page 5

... NXP Semiconductors 7. Revision history Table 6. Revision history Document ID Release date BGR269 v.6 20100805 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 6

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 6 — 5 August 2010 BGR269 200 MHz gain reverse amplifier © NXP B.V. 2010. All rights reserved ...

Page 7

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 6 — 5 August 2010 BGR269 200 MHz gain reverse amplifier Trademarks © NXP B.V. 2010. All rights reserved ...

Page 8

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGR269 All rights reserved. Date of release: 5 August 2010 Document identifier: BGR269 ...

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