TDF8590TH NXP Semiconductors, TDF8590TH Datasheet - Page 15
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TDF8590TH
Manufacturer Part Number
TDF8590TH
Description
The TDF8590TH is a high-efficiency class-D audio power amplifier with low powerdissipation for application in car audio systems
Manufacturer
NXP Semiconductors
Datasheet
1.TDF8590TH.pdf
(30 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TDF8590TH
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
11. Switching characteristics
Table 10.
V
12. Application information
TDF8590TH_2
Product data sheet
Symbol
Internal oscillator
f
External oscillator or frequency tracking
V
V
Drain source on-state resistance of the output transistors
R
R
osc
DD
f
H(OSC)min
L(OSC)max
DSon(ls)
DSon(hs)
track
= 27 V; T
Switching characteristics
Parameter
oscillator frequency
minimum HIGH-level voltage on pin OSC
maximum LOW-level voltage on pin OSC
tracking frequency range
low-side drain-source on-state resistance
high-side drain-source on-state resistance
amb
12.1 BTL application
12.2 Output power estimation
= 40 C to +85 C; T
When using the power amplifier in a mono BTL application the inputs of both channels
must be connected in parallel and the phase of one of the inputs must be inverted (see
Figure
demodulation filters.
The achievable output powers in SE and BTL applications can be estimated using the
following expressions:
SE:
BTL:
P
P
o 0.5%
7). The loudspeaker is connected between the outputs of the two single-ended
o 0.5%
j
=
= 40 C to +150 C; unless otherwise specified.
=
---------------------------------------------------------------------------------------------------------------------------------
------------------------------------------------------
R
------------------------------------------------------------------------------------------------------------------------------------------------------------------------- -
------------------------------------------------------------------------------------------- 2V
R
L
L
+
+
R
DSon hs
Rev. 02 — 23 April 2007
R
DSon hs
R
L
2
Conditions
typical; R
maximum; R
minimum; R
referred to SGND
referred to SGND
T
T
T
T
+
j
j
j
j
80 W SE (4 ) or 1
= 85 C; I
= 25 C; I
= 85 C; I
= 25 C; I
R
+
R
s L
R
L
DSon ls
2
ext(OSC)
V
DS
DS
DS
DS
ext(OSC)
R
ext(OSC)
P
L
= 6 A
= 6 A
= 6 A
= 6 A
+
= 30.0 k
1 t
2
2R
–
= 48.9 k
= 15.4 k
s L
R
w min
L
160 W BTL (8 ) class-D amplifier
f
P
osc
1 t
Min
290
-
-
4
0
210
-
-
-
-
2
–
TDF8590TH
W
w min
Typ
310
560
200
-
-
-
250
190
300
220
© NXP B.V. 2007. All rights reserved.
f
Max
344
-
-
6
1
600
275
210
330
240
osc
2
W
15 of 30
Unit
kHz
kHz
kHz
V
V
kHz
m
m
m
m