BAT54CV NXP Semiconductors, BAT54CV Datasheet - Page 3

• Manufacturer Part Number: BAT54CV
• Description: Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
BAT54CV
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
[3]
[4]
[5]
Symbol
Per device, one diode loaded
P
T
T
T
Symbol
Per device, one diode loaded
R
R
j
amb
stg
tot
th(j-a)
th(j-sp)
T
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
R
are a significant part of the total power losses.
Rev. 3 — 15 November 2010
…continued
Conditions
in free air
Conditions
T
amb
≤ 25 °C
Two Schottky barrier double diodes
[1][2]
[3]
[4]
[5]
Min
-
-
-
[2]
[3]
[4]
Min
-
-
-
−65
−65
Typ
-
-
-
BAT54CV
© NXP B.V. 2010. All rights reserved.
Max
350
420
125
+125
+150
Max
360
300
175
Unit
mW
mW
°C
°C
°C
2
2
Unit
K/W
K/W
K/W
.
.
3 of 10