BAT760 NXP Semiconductors, BAT760 Datasheet - Page 3

Planar medium power Schottky barrier single diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) very small Surface-MountedDevice SMD plastic package

BAT760

Manufacturer Part Number
BAT760
Description
Planar medium power Schottky barrier single diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) very small Surface-MountedDevice SMD plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAT760_3
Product data sheet
Table 6.
[1]
[2]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 10
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 40
Pulse test: t
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
10 mm
300 s;
2
.
Rev. 03 — 17 October 2008
0.02.
Conditions
I
I
I
V
V
V
V
F
F
F
R
R
R
R
= 10 mA
= 100 mA
= 1 A
= 5 V
= 8 V
= 15 V
= 5 V; f = 1 MHz
Conditions
in free air
Medium power Schottky barrier single diode
[1]
[2]
[1]
[1]
Min
-
-
Min
-
-
-
-
-
-
-
Typ
-
-
Typ
240
300
480
5
7
10
19
© NXP B.V. 2008. All rights reserved.
BAT760
Max
220
180
Max
270
350
550
10
20
50
25
40 mm
Unit
K/W
K/W
Unit
mV
mV
mV
pF
3 of 9
A
A
A
2
.

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