PMEG2005EPK NXP Semiconductors, PMEG2005EPK Datasheet - Page 6

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab

PMEG2005EPK

Manufacturer Part Number
PMEG2005EPK
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PMEG2005EPK
Product data sheet
Fig 5.
Fig 7.
(pF)
(A)
C
I
10
10
10
10
F
d
10
75
50
25
-1
-2
-3
-4
1
0
0.0
voltage; typical values
voltage; typical values
(1) T
(2) T
(3) T
(4) T
(5) T
Forward current as a function of forward
f = 1 MHz; T
Diode capacitance as a function of reverse
0
(1)
(2)
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(3)
0.2
5
amb
(4)
= 25 °C
(5)
0.4
10
0.6
15
All information provided in this document is subject to legal disclaimers.
006aac943
V
006aac945
V
R
F
(V)
(V)
0.8
Rev. 1 — 12 January 2012
20
Fig 6.
Fig 8.
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
P
(W)
F(AV)
(A)
I
R
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
-7
-8
0.00
voltage; typical values
function of average forward current; typical
values
(1) T
(2) T
(3) T
(4) T
Reverse current as a function of reverse
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Average forward power dissipation as a
0
j
= 150 °C
j
j
j
j
= 125 °C
= 85 °C
= 25 °C
= −40 °C
5
(1)
0.25
PMEG2005EPK
(2)
10
(1)
(2)
(3)
(4)
0.50
(3)
15
I
F(AV)
© NXP B.V. 2012. All rights reserved.
V
006aac944
006aac946
R
(A)
(V)
(4)
0.75
20
6 of 13

Related parts for PMEG2005EPK