PMEGXX10BEA_PMEGXX10BEV NXP Semiconductors, PMEGXX10BEA_PMEGXX10BEV Datasheet
PMEGXX10BEA_PMEGXX10BEV
Related parts for PMEGXX10BEA_PMEGXX10BEV
PMEGXX10BEA_PMEGXX10BEV Summary of contents
Page 1
DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low V barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 DISCRETE SEMICONDUCTORS MEGA Schottky F 2004 Jun 14 ...
Page 2
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier FEATURES • Forward current • Reverse voltages • Very low forward voltage • Ultra small and very small plastic SMD package • Power dissipation comparable to SOT23. APPLICATIONS • High efficiency DC-to-DC conversion • ...
Page 3
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier ORDERING INFORMATION TYPE NUMBER NAME − PMEGXX10BEA PMEGXX10BEV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V continuous reverse voltage R PMEG2010BEA/PMEG2010BEV PMEG3010BEA/PMEG3010BEV PMEG4010BEA/PMEG4010BEV I continuous forward current F I repetitive peak forward current ...
Page 4
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier THERMAL CHARACTERISTICS SYMBOL PMEGXX10BEA (SOD323) R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point PMEGXX10BEV (SOT666) R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. ...
Page 5
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier GRAPHICAL DATA 4 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 PMEG2010BEA/PMEG2010BEV = 150 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.3 Forward current as a function of forward voltage; typical values. ...
Page 6
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier (μ PMEG3010BEA/PMEG3010BEV = 150 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.7 Reverse current as a function of reverse voltage; typical values handbook, halfpage ...
Page 7
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier 100 handbook, halfpage C d (pF PMEG4010BEA/PMEG4010BEV = 25 ° MHz. T amb Fig.11 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 MHC681 (V) 7 Product data sheet PMEGXX10BEA; ...
Page 8
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier PACKAGE OUTLINES Plastic surface-mounted package; 2 leads 1 (1) DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.40 0.25 mm 0.05 0.8 0.25 0.10 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 2004 Jun ...
Page 9
... NXP Semiconductors 1 A very low V MEGA Schottky F barrier rectifier Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2004 Jun scale ...
Page 10
... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
Page 11
... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...