PMEG2010ER NXP Semiconductors, PMEG2010ER Datasheet
PMEG2010ER
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PMEG2010ER Summary of contents
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... PMEG2010ER 1 A low V Rev. 01 — 29 December 2008 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. ...
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... T average forward current square wave kHz T T non-repetitive peak square wave; forward current t total power dissipation T Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F Simplified outline Graphic symbol [ Marking code B5 Min = 0.5 ...
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... standard footprint Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F Min Max - 150 55 +150 65 +150 ...
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... FR4 PCB, mounting pad for cathode 1 cm Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2010ER_1 Product data sheet 1 A low Rev. 01 — 29 December 2008 PMEG2010ER MEGA Schottky barrier rectifier F 006aab260 (s) p 006aab261 2 10 ...
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... reverse current diode capacitance MHz Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F 006aab262 (s) p Min Typ Max - 220 250 - 290 320 - 310 ...
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... PMEG2010ER_1 Product data sheet 006aab263 (5) 0.3 0.4 0.5 V (V) F Fig 5. 350 C d (pF) 300 250 200 150 100 Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifi ( ...
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... F(AV) (1) (2) (3) (4) Fig 8. 006aab268 I F(AV) (A) 125 150 175 amb (1) (2) (3) (4) Fig 10. Average forward current as a function of Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifi 1.5 (1) (2) 1 (3) 0 125 0.9 = 0.8 = 0.5 Average reverse power dissipation as a function of reverse voltage ...
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... Product data sheet 006aab270 1.6 I F(AV) (A) 1.2 0.8 0.4 0 125 150 175 amb (1) (2) (3) (4) Fig 12. Average forward current as a function of Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F 006aab271 (1) (2) (3) ( 100 125 150 150 0.5 ...
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... Fig 14. Package outline SOD123W PMEG2010ER_1 Product data sheet DC, and RMS M 1.9 1.5 3.7 2.8 3.3 2.4 1.05 0.75 Dimensions in mm Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifi duty cycle = 006aaa812 Figure 9, 10, with I defined as peak current with I defi ...
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... Packing methods Package Description SOD123W 4 mm pitch tape and reel 4.4 2.9 2.8 2.1 1 Reflow soldering is the only recommended soldering method. Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F [1] Packing quantity 3000 -115 Section 14. solder lands solder resist 1.1 1 ...
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... Revision history Table 9. Revision history Document ID Release date PMEG2010ER_1 20081229 PMEG2010ER_1 Product data sheet 1 A low V Data sheet status Change notice Product data sheet - Rev. 01 — 29 December 2008 PMEG2010ER MEGA Schottky barrier rectifier F Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 29 December 2008 PMEG2010ER 1 A low V MEGA Schottky barrier rectifier F © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 December 2008 Document identifier: PMEG2010ER_1 ...