PMEG3020DEP NXP Semiconductors, PMEG3020DEP Datasheet - Page 5

• Manufacturer Part Number: PMEG3020DEP
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEG3020DEP_1
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
3
duty cycle =
0.25
0.02
0.5
0.1
1
0
0.75
0.33
0.05
0.01
0.2
Table 7.
T
2
Symbol
V
I
C
10
R
O
j
F
d
= 25 C unless otherwise specified.
3
, standard footprint
2
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
10
1
Rev. 01 — 21 April 2009
1
Conditions
I
I
I
I
I
V
V
V
f = 1 MHz
F
F
F
F
F
R
R
R
= 0.1 A
= 0.7 A
= 1 A
= 1.5 A
= 2 A
V
V
= 5 V
= 10 V
= 30 V
R
R
= 1 V
= 10 V
2 A low V
10
F
MEGA Schottky barrier rectifier
PMEG3020DEP
Min
-
-
-
-
-
-
-
-
-
-
10
2
Typ
315
390
405
430
460
2
3
15
170
60
t
p
© NXP B.V. 2009. All rights reserved.
(s)
006aab376
Max
360
430
450
480
520
-
-
50
-
-
10
3
Unit
mV
mV
mV
mV
mV
pF
pF
A
A
A
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