BAS321 NXP Semiconductors, BAS321 Datasheet - Page 2

The BAS321 is a general purpose diode fabricated inplanar technology and encapsulated in a plastic SOD323package

BAS321

Manufacturer Part Number
BAS321
Description
The BAS321 is a general purpose diode fabricated inplanar technology and encapsulated in a plastic SOD323package
Manufacturer
NXP Semiconductors
Datasheet

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FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 26
V
V
I
I
I
P
T
T
F
FRM
FSM
NUMBER
SYMBOL
circuits.
stg
j
RRM
R
tot
General purpose diode
BAS321
TYPE
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
NAME
PARAMETER
plastic surface mounted package; 2 leads
see Fig.2; note 1
t
surge; see Fig.4
T
p
amb
< 0.5 ms; δ ≤ 0.25
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
CONDITIONS
Marking code: A7
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
j
= 25 °C prior to
1
PIN
1
2
−65
cathode
anode
MIN.
2
DESCRIPTION
Product data sheet
MAM406
250
200
250
625
9
3
1.7
300
+150
150
MAX.
BAS321
VERSION
SOD323
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT

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