BAS321 NXP Semiconductors, BAS321 Datasheet - Page 5

The BAS321 is a general purpose diode fabricated inplanar technology and encapsulated in a plastic SOD323package

BAS321

Manufacturer Part Number
BAS321
Description
The BAS321 is a general purpose diode fabricated inplanar technology and encapsulated in a plastic SOD323package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2004 Jan 26
handbook, halfpage
handbook, halfpage
General purpose diode
(1) V
(2) V
Fig.5
(µA)
10
10
V R
(V)
300
200
100
I R
10
Fig.7
10
R
R
0
1
2
1
2
= V
= V
0
0
Reverse current as a function of junction
temperature.
Rmax
Rmax
Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
; maximum values.
; typical values.
50
(1)
100
100
(2)
T j (
150
o
C)
T amb (°C)
MBG381
MBK926
200
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.0
0.8
0.6
0.4
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
4
6
Product data sheet
V R (V)
BAS321
MBG447
8

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