BAW101S NXP Semiconductors, BAW101S Datasheet - Page 4

• Manufacturer Part Number: BAW101S
• Description: The BAW101S is a high-speed switching diode array withtwo separate dice, fabricated in planar technology andencapsulated in a small SOT363 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
GRAPHICAL DATA
2003 May 13
handbook, halfpage
R
R
SYMBOL
High voltage double diode
th j-s
th j-a
(1) Single diode loaded.
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm
Fig.2
(mA)
300
I F
200
100
0
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
50
(1)
(2)
100
2
(2) Double diode loaded.
.
PARAMETER
150
T amb (°C)
MLE057
200
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
note 1
note 2
(mA)
600
400
200
I F
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
CONDITIONS
0
Forward current as a function of forward
voltage.
2
.
1
(1)
VALUE
255
357
(2)
V F (V)
Product data sheet
BAW101S
(3)
MBG384
UNIT
2
K/W
K/W