IP4302CX2_A NXP Semiconductors, IP4302CX2_A Datasheet - Page 3

• Manufacturer Part Number: IP4302CX2_A
• Description: The IP4302CX2/A is a bidirectional diode which is designed to provide protection todownstream components from ElectroStatic Discharge (ESD) voltages as high as ±15 kVcontact discharge according to the IEC 61000-4-2 model, far exceeding standard
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
5. Characteristics
IP4302CX2_A
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 5.
T
Symbol Parameter
V
T
T
T
Symbol Parameter
I
V
C
LR
amb
j
amb
stg
ESD
BR
d
Device is qualified with 1000 pulses of 15 kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
A special robust test is performed stressing the devices with  1000 contact discharges according to the
IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge).
= 25

reverse leakage current
breakdown voltage
diode capacitance
electrostatic
discharge voltage
junction temperature
ambient temperature
storage temperature
C; unless otherwise specified.
Limiting values
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 November 2011
Conditions
contact discharge
air discharge
IEC 61000-4-2 level 4
MIL-STD-883D (method 3015) HBM
contact discharge
air discharge
Conditions
V
V
I
I
f = 1 MHz; V
R
R
RWM
RWM
= 1 mA
= 1 mA
Low profile bidirectional ESD protection diode
= 5 V
= 5 V
R
= 0 V
IP4302CX2/A
Min
-
20
14.0
-
-
[1][2]
Min
15
15
8
15
4
-
35
65
Typ
-
-
16.5
16.5 14.0 V
-
© NXP B.V. 2011. All rights reserved.
Max
+15
+15
+8
+15
+4
150
+85
+150
Max
20
-
-
10
Unit
kV
kV
kV
kV
kV
C
C
C
Unit
nA
nA
V
pF
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