BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 11
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/53/415317/sot426_3d_sml.gif)
BUK7107-55ATE
Manufacturer Part Number
BUK7107-55ATE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7107-55ATE.pdf
(15 pages)
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NXP Semiconductors
BUK7107-55ATE_2
Product data sheet
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values
100
(A)
I S
80
60
40
20
0
0.0
0.2
Rev. 02 — 19 February 2009
0.4
175 °C
0.6
0.8
T j = 25 °C
N-channel TrenchPLUS standard level FET
V SD (V)
03ni72
1.0
BUK7107-55ATE
© NXP B.V. 2009. All rights reserved.
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