BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 4

• Manufacturer Part Number: BUK7107-55ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7107-55ATE_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
(A)
I D
120
10 3
10 2
80
40
10
0
1
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Capped at 75 A due to package
Limit R DSon = V DS /I D
50
100
150
T
mb
03na19
(°C)
Rev. 02 — 19 February 2009
200
DC
10
Fig 2.
160
120
I D
(A)
80
40
function of mounting base temperature
Normalized continuous drain current as a
0
N-channel TrenchPLUS standard level FET
0
Capped at 75A due to package
50
BUK7107-55ATE
V DS (V)
100
100 μs
1 ms
10 ms
t p = 10 μs
100 ms
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03nf55
03ni63
10 2
200
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