BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 8

• Manufacturer Part Number: BUK7107-55ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7107-55ATE_2
Product data sheet
Fig 5.
Fig 7.
R DSon
400
300
200
100
(A)
(m Ω )
I D
0
12
10
8
6
4
2
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
20
12
20
2
10
V GS (V) = 5.5
40
8.5
4
60
6
80
V GS (V) =
8
8
6.5
100
V DS (V)
10
7
8
03ni67
I D (A)
03ni65
7.5
5.5
4.5
6.5
7
6
4
Rev. 02 — 19 February 2009
10
120
Fig 6.
Fig 8.
R DSon
(m Ω )
1.5
0.5
a
2
1
0
-60
of gate-source voltage; typical values
factor as a function of junction temperature
8
7
6
5
4
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
N-channel TrenchPLUS standard level FET
5
0
BUK7107-55ATE
10
60
15
120
© NXP B.V. 2009. All rights reserved.
V GS (V)
T
j
03ne89
( ° C)
03ni66
180
20
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