BUK7109-75AIE NXP Semiconductors, BUK7109-75AIE Datasheet
BUK7109-75AIE
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BUK7109-75AIE Summary of contents
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... BUK7109-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... BUK7109-75AIE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 10 February 2009 BUK7109-75AIE Graphic symbol sense Kelvin source MBL368 Version SOT426 © NXP B.V. 2009. All rights reserved ...
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... °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 10 February 2009 BUK7109-75AIE Min Max - - [1] - 120 [ [ Figure 3 - 480 ...
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... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature 100 μ Rev. 02 — 10 February 2009 BUK7109-75AIE 03ni95 50 100 150 200 T mb (°C) 03ni96 μ 100 (V) © NXP B.V. 2009. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7109-75AIE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions minimum footprint; mounted on a printed-circuit board see Figure Rev. 02 — 10 February 2009 BUK7109-75AIE Min Typ Max Unit - 0.55 K/W ...
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... Ω °C G(ext) j measured from upper edge of drain mounting base to centre of die °C j measured from source lead to source bond pad °C j Rev. 02 — 10 February 2009 BUK7109-75AIE Min Typ Max Unit ...
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... −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 10 February 2009 BUK7109-75AIE N-channel TrenchPLUS standard level FET Min Typ Max - 0.85 1 270 - 03ni82 (V) 03nb25 ...
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... C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75AIE 03aa35 min typ max (V) GS 03ni97 C iss C rss C oss ...
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... (V) Fig 16. Reverse diode current as a function of reverse diode voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75AIE 03ni92 100 150 Q G (nC) 03ni85 175 ° °C 0.4 0.8 1.2 1 (V) © ...
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... max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 10 February 2009 BUK7109-75AIE N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. SOT426 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7109-75AIE separated from data sheet BUK71_7909_75AIE-01. BUK71_7909_75AIE-01 20020809 (9397 750 09879) BUK7109-75AIE_2 ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 10 February 2009 BUK7109-75AIE © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2009 Document identifier: BUK7109-75AIE_2 All rights reserved. ...