BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet

MOSFET N-CH 75V 75A D2PAK

BUK7109-75AIE,118

Manufacturer Part Number
BUK7109-75AIE,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7109-75AIE,118

Package / Case
D²Pak, TO-263 (4 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
121nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
272W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
272000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057281118
BUK7109-75AIE /T3
BUK7109-75AIE /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed
and qualified to the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol Parameter
V
I
Static characteristics
R
I
D
D
DS
DSon
/I
sense
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Electrical Power Assisted Steering
(EPAS)
Current is limited by power dissipation chip rating.
BUK7109-75AIE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
drain-source voltage T
drain current
drain-source
on-state resistance
ratio of drain current
to sense current
Quick reference
Conditions
V
see
V
T
see
T
V
j
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
> -55 °C; T
Figure
Figure 8
= 10 V; T
= 10 V; I
> 10 V
2; see
j
D
j
≤ 175 °C
mb
< 175 °C;
= 50 A;
Figure
= 25 °C;
Figure 3
7;
Reduced component count due to
integrated current sensor
Suitable for standard level gate drive
sources
Variable Valve Timing for engines
[1]
Min
-
-
-
450
Product data sheet
Typ
-
-
8
500
Max
75
120
9
550
Unit
V
A
mΩ

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BUK7109-75AIE,118 Summary of contents

Page 1

... BUK7109-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... BUK7109-75AIE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 10 February 2009 BUK7109-75AIE Graphic symbol sense Kelvin source MBL368 Version SOT426 © NXP B.V. 2009. All rights reserved ...

Page 3

... ° °C; see Figure 1 mb continuous = 5 ms; δ 0.01 pulsed °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 10 February 2009 BUK7109-75AIE Min Max - - [1] - 120 [ [ Figure 3 - 480 - 272 - -55 175 -55 175 [1] ...

Page 4

... Capped due to package 40 0 150 200 0 T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature 100 μ Rev. 02 — 10 February 2009 BUK7109-75AIE 03ni95 50 100 150 200 T mb (°C) 03ni96 μ 100 (V) © NXP B.V. 2009. All rights reserved ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7109-75AIE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions minimum footprint; mounted on a printed-circuit board see Figure Rev. 02 — 10 February 2009 BUK7109-75AIE Min Typ Max Unit - 0.55 K/W ...

Page 6

... Figure MHz °C; see Figure 1.2 Ω Ω °C G(ext) j measured from upper edge of drain mounting base to centre of die °C j measured from source lead to source bond pad °C j Rev. 02 — 10 February 2009 BUK7109-75AIE Min Typ Max Unit 4 0.1 10 µ 250 µA ...

Page 7

... Drain-source on-state resistance as a function of gate-source voltage; typical values 03ni81 −60 300 400 I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 10 February 2009 BUK7109-75AIE N-channel TrenchPLUS standard level FET Min Typ Max - 0.85 1 270 - 03ni82 (V) 03nb25 0 ...

Page 8

... Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni83 8000 C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75AIE 03aa35 min typ max (V) GS 03ni97 C iss C rss C oss ...

Page 9

... (V) Fig 16. Reverse diode current as a function of reverse diode voltage; typical values Rev. 02 — 10 February 2009 BUK7109-75AIE 03ni92 100 150 Q G (nC) 03ni85 175 ° °C 0.4 0.8 1.2 1 (V) © NXP B.V. 2009. All rights reserved. ...

Page 10

... E e max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 10 February 2009 BUK7109-75AIE N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7109-75AIE separated from data sheet BUK71_7909_75AIE-01. BUK71_7909_75AIE-01 20020809 (9397 750 09879) BUK7109-75AIE_2 ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 10 February 2009 BUK7109-75AIE © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2009 Document identifier: BUK7109-75AIE_2 All rights reserved. ...

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