BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet - Page 10

• Manufacturer Part Number: BUK7109-75AIE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75AIE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057281118; BUK7109-75AIE /T3; BUK7109-75AIE /T3

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT426 (D2PAK)
BUK7109-75AIE_2
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT426
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
1
0.64
0.46
c
e
max.
11
D
2
e
E
JEDEC
1.60
1.20
3
D 1
4
e
REFERENCES
Rev. 02 — 10 February 2009
10.30
e
9.70
E
0
5
1.70
b
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
N-channel TrenchPLUS standard level FET
2.60
2.20
mounting
Q
base
L p
BUK7109-75AIE
A 1
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
05-03-09
06-03-16
SOT426
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