BUK7109-75AIE,118 NXP Semiconductors, BUK7109-75AIE,118 Datasheet - Page 11

• Manufacturer Part Number: BUK7109-75AIE,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7109-75AIE,118

• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Current Sensing
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 121nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 272000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057281118; BUK7109-75AIE /T3; BUK7109-75AIE /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK7109-75AIE_2
Product data sheet
Document ID
BUK7109-75AIE_2
Modifications:
BUK71_7909_75AIE-01
(9397 750 09879)
Revision history
Release date
20090210
20020809
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7109-75AIE separated from data sheet BUK71_7909_75AIE-01.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 10 February 2009
Change notice
-
-
N-channel TrenchPLUS standard level FET
BUK7109-75AIE
Supersedes
BUK71_7909_75AIE-01
-
© NXP B.V. 2009. All rights reserved.
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