BUK7227-100B NXP Semiconductors, BUK7227-100B Datasheet - Page 8

• Manufacturer Part Number: BUK7227-100B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7227-100B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
75
50
25
60
50
40
30
20
10
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
Label is V
35
2
GS
T
(V)
j
= 185 ° C
6
70
4
6.5
T
7
j
= 25 °C
8
105
6
All information provided in this document is subject to legal disclaimers.
10
V
I
GS
D
(A)
03nl26
03nl29
(V)
20
Rev. 02 — 17 February 2011
140
8
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.8
2.1
1.4
0.7
0
5
4
3
2
1
0
-60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
10
10
BUK7227-100B
80
80
max
min
typ
150
150
© NXP B.V. 2011. All rights reserved.
T
T j (°C)
j
(°C)
03no98
03np02
220
220
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