BUK754R0-40C NXP Semiconductors, BUK754R0-40C Datasheet - Page 7

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK754R0-40C

Manufacturer Part Number
BUK754R0-40C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BUK754R0-40C
Product data sheet
Fig 5.
Fig 7.
RDSon
(m Ω )
(A)
I
150
D
120
90
60
30
8
7
6
5
4
3
0
of gate voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
4
0
8
2
T
j
= 175 ° C
12
4
25 ° C
16
6
All information provided in this document is subject to legal disclaimers.
V
003aac578
V
003aac584
GS
GS
(V)
(V)
20
8
Rev. 02 — 20 July 2010
Fig 6.
Fig 8.
(A)
I
10
10
10
10
10
10
D
120
(S)
g
90
60
30
fs
−1
−2
−3
−4
−5
−6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
N-channel TrenchMOS standard level FET
15
2
BUK754R0-40C
min
30
typ
4
45
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aac583
I
D
(V)
(A)
03aa35
60
6
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