BUK754R0-40C NXP Semiconductors, BUK754R0-40C Datasheet - Page 8

• Manufacturer Part Number: BUK754R0-40C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK754R0-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
200
I
150
100
D
50
1.5
0.5
a
0
2
1
0
function of drain-source voltage; typical values
-60
factor as a function of junction temperature
Output characteristics: drain current as a
0
20
10
1.5
0
V
GS
(V) =
6.5
60
3
120
4.5
All information provided in this document is subject to legal disclaimers.
V
T
003aac576
DS
j
03ne89
( ° C)
5.75
5.25
(V)
5.5
6
5
180
6
Rev. 02 — 20 July 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
GS(th)
(mΩ )
(V)
DSon
22
17
12
7
2
5
4
3
2
1
0
−60
junction temperature
of drain current; typical values
0
V
N-channel TrenchMOS standard level FET
GS
(V) =
4.5
0
60
BUK754R0-40C
5
60
5.25
max
min
typ
120
5.5
120
© NXP B.V. 2010. All rights reserved.
I
003aac579
D
T
j
(A)
(°C)
03aa32
5.75
6.5
10
20
6
180
180
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