BUK7575-55A NXP Semiconductors, BUK7575-55A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7575-55A

Manufacturer Part Number
BUK7575-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
Avalanche ruggedness
E
I
D
DS
tot
DS(AL)S
DSon
BUK7575-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 4 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
V
T
see
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 11 A; V
Figure
Figure 13
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
GS
= 10 A;
= 10 A;
≤ 55 V;
Figure
= 25 °C;
Figure
= 10 V;
Figure 2
Figure 3
12;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
12;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
64
-
Max Unit
55
20.3 A
62
150
75
30.3 mJ
V
W
mΩ
mΩ

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BUK7575-55A Summary of contents

Page 1

... BUK7575-55A N-channel TrenchMOS standard level FET Rev. 02 — 4 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... T 10 Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET 03nc12 = 10 μ 100 μ 100 (V) DS Min ...

Page 5

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A Min Typ Max Unit ...

Page 6

... Fig 6. 03nc05 (nC) G Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET 160 140 120 100 Drain-source on-state resistance as a function of gate-source voltage; typical values − ...

Page 7

... Fig 10. Reverse diode current as a function of reverse 03aa32 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET 120 I S (A) 100 175 °C ...

Page 8

... T (°C) j Fig 14. Input, output and reverse capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET C iss C oss C rss −2 − ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7575-55A separated from data sheet BUK7575_7675_55A v.1. BUK7575_7675_55A v.1 20001208 BUK7575-55A Product data sheet N-channel TrenchMOS standard level FET ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 February 2011 BUK7575-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 February 2011 Document identifier: BUK7575-55A ...

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