BUK7575-55A NXP Semiconductors, BUK7575-55A Datasheet - Page 8

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7575-55A

Manufacturer Part Number
BUK7575-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BUK7575-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
120
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
Rev. 02 — 4 February 2011
180
Fig 14. Input, output and reverse capacitances as a
(pF)
C
600
500
400
300
200
100
0
10
function of drain-source voltage; typical values
−2
N-channel TrenchMOS standard level FET
10
C
C
C
oss
rss
iss
−1
BUK7575-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nc11
(V)
10
2
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