BUK761R8-30C NXP Semiconductors, BUK761R8-30C Datasheet

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK761R8-30C

Manufacturer Part Number
BUK761R8-30C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK761R8-30C
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NXP
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Part Number:
BUK761R8-30C
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
Table 1.
[1]
[2]
Symbol Parameter
I
P
Static characteristics
R
Avalanche ruggedness
E
D
tot
DS(AL)S
DSon
BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 — 20 August 2007
175 °C rated
Standard level compatible
12 V loads
General purpose power switching
Refer to document 9397 750 12572 for further information.
Continuous current is limited by package.
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Quick reference
Conditions
V
see
T
V
T
13
I
R
T
D
mb
j
j(init)
GS
GS
GS
= 25 °C; see
= 100 A; V
Figure 1
= 25 °C; see
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C
D
and
sup
mb
GS
= 25 A;
Figure 12
≤ 30 V;
= 25 °C;
= 10 V;
Figure 2
4
Q101 compliant
TrenchMOS technology
Automotive systems
Motors, lamps and solenoids
and
[1][2]
Min
-
-
-
-
Product data sheet
Typ
-
-
1.5
-
Max Unit
100
333
1.8
1.7
A
W
J

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BUK761R8-30C Summary of contents

Page 1

... BUK761R8-30C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 175 °C rated Standard level compatible 1.3 Applications 12 V loads General purpose power switching 1 ...

Page 2

... D sup ° j(init) see Figure ° ° ≤ 10 μs; pulsed ° Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET Graphic Symbol mbb076 2 3 Min Max - -20 20 [1][2] and 4 - 100 ...

Page 3

... T (° der Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 20 August 2007 BUK761R8-30C 03aa16 50 100 150 200 ( ° tot = × 100 % P tot ( 25°C ) © NXP B.V. 2007. All rights reserved. ...

Page 4

... AL ( DSon Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET (1) (2) (3) 10 (ms) AL 003aab339 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2007. All rights reserved ...

Page 5

... 175 °C; see T Figure 11 and ° mA see Figure 11 and 10 Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET Min Typ Max - 0.45 003aab340 t p δ (s) ...

Page 6

... Ω G(ext) = 1.2 Ω Ω G(ext) = 1.2 Ω Ω G(ext) Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET Min Typ Max - 0. 500 - 2 100 - 2 100 - - 3.4 - 1.5 1.8 - 0.85 1 ...

Page 7

... R DSon (mΩ ( 4 ( Fig 7. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET Min Typ Max - 134 - - 2 7.5 - 003aab361 5 100 200 ...

Page 8

... V ( Fig 11. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET 003aab346 175 ° ° ( 03aa32 max typ min 0 60 120 T (° ...

Page 9

... V DS 4000 0 100 150 10 Q (nC Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET 03aa27 0 60 120 ( ° DSon R DSon ( 25°C ) 003aab345 C iss ...

Page 10

... Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK761R8-30C_2 Product data sheet 200 I S (A) 150 100 = 175 ° ° 0.5 1 1.5 Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET 003aab348 2 V (V) SD © NXP B.V. 2007. All rights reserved ...

Page 11

... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2007. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 8. Soldering 2.25 8.35 8.15 4.60 4.85 7.95 solder lands solder resist occupied area solder paste Fig 18. Reflow soldering footprint for SOT404 BUK761R8-30C_2 Product data sheet 10.85 10.60 10.50 1.50 7.50 7.40 2.15 1.50 0.30 3.00 5.08 Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET 1.70 8.275 5.40 8.075 0.20 1.20 1.30 1.55 msd057 © NXP B.V. 2007. All rights reserved ...

Page 13

... Legal texts have been adapted to the new company name where appropriate. BUK761R8-30C_1 20060725 BUK761R8-30C_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 20 August 2007 BUK761R8-30C Supersedes BUK761R8-30C_1 - © NXP B.V. 2007. All rights reserved ...

Page 14

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 20 August 2007 BUK761R8-30C N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK761R8-30C_2 All rights reserved. Date of release: 20 August 2007 ...

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