BUK761R8-30C NXP Semiconductors, BUK761R8-30C Datasheet - Page 5

• Manufacturer Part Number: BUK761R8-30C
• Description: Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BUK761R8-30C_2
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
V
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
(BR)DSS
GSth
th(j-a)
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
-6
0.02
Thermal characteristics
0.2
0.05
Characteristics
δ = 0.5
0.1
single shot
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to
mounting base
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
10
-5
Conditions
mounted on printed circuit board;
minimum footprint
see
Conditions
I
T
I
T
I
T
I
T
10
I
see
D
D
D
D
D
j
j
j
j
= 250 μA; V
= 25 °C
= 250 μA; V
= -55 °C
= 1 mA; V
= -55 °C; see
= 1 mA; V
= 175 °C; see
= 1 mA; V
Figure 5
Figure 11
10
-4
Rev. 02 — 20 August 2007
DS
DS
DS
GS
GS
and
= V
= V
= V
Figure 10
Figure 11
= 0 V;
= 0 V;
GS
10
GS
GS
; T
;
;
10
j
-3
= 25 °C;
and
N-channel TrenchMOS standard level FET
10
Min
-
-
Min
30
27
-
1
2
-2
BUK761R8-30C
Typ
-
-
-
-
3
Typ
50
-
10
P
-1
t
p
T
t
p
Max
-
-
4.4
-
4
Max
-
0.45
© NXP B.V. 2007. All rights reserved.
(s)
003aab340
δ =
T
t
p
t
1
Unit
V
V
V
V
V
Unit
K/W
K/W
5 of 15