BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet
BUK7880-55A
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BUK7880-55A Summary of contents
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... BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 150 C rated 1.3 Applications ...
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... C; see Figure pulsed unclamped inductive load starting Figure 16. of 150 C. j(max) Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET Min Max - - - Figure 2 and 3 - Figure see Figure ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7880-55A_1 Product data sheet 03aa17 150 200 Fig 2. Continuous drain current as a function Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET ( 100 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration BUK7880-55A_1 Product data sheet N-channel TrenchMOS standard level FET Conditions - Rev. 01 — 1 November 2007 BUK7880-55A Min Typ Max - 003aab529 ...
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... GS DS see Figure 1 see Figure /dt = 100 Rev. 01 — 1 November 2007 BUK7880-55A Min Typ Max 1 4 500 - 2 100 and ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab524 (A) D Fig 8. Normalized drain-source on-state resistance Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET 100 DSon gate-source voltage; typical values ...
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... Fig 10. Sub-threshold drain current as a function of 003aab527 10 C (pF (A) D Fig 12. Input, output and reverse transfer capacitances Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET 1 min typ max ...
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... V (V) GS Fig 14. Gate-source voltage as a function of gate 003aab521 = 1.2 1.6 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET ( ( ...
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... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 ISSUE DATE 04-11-10 06-03-16 © NXP B.V. 2007. All rights reserved. ...
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... Fig 18. Reflow soldering footprint for SOT223 (SC-73) BUK7880-55A_1 Product data sheet N-channel TrenchMOS standard level FET 7.00 3.85 3.60 3.50 0. 5.90 6.15 occupied area solder resist Dimensions in mm Rev. 01 — 1 November 2007 BUK7880-55A 4.80 3.90 7.65 sot223_fr © NXP B.V. 2007. All rights reserved ...
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... NXP Semiconductors 9. Revision history Table 6. Revision history Document ID Release date BUK7880-55A_1 20071101 BUK7880-55A_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 1 November 2007 BUK7880-55A Supersedes - © NXP B.V. 2007. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 1 November 2007 BUK7880-55A N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 November 2007 Document identifier: BUK7880-55A_1 ...