BUK7880-55A NXP Semiconductors, BUK7880-55A Datasheet - Page 2

• Manufacturer Part Number: BUK7880-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK7880-55A_1
Product data sheet
Type number
BUK7880-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
DR
DRM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Conditions:
a) Maximum value not quoted. Repetitive rating defined in
b) Single-pulse avalanche rating limited by T
c) Repetitive avalanche rating limited by an average junction temperature of 150 C.
d) Refer to application note AN10273 for further information.
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
Ordering information
Limiting values
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
j(max)
Rev. 01 — 1 November 2007
of 150 C.
Conditions
R
T
T
T
T
T
T
unclamped inductive load; I
R
sp
sp
sp
sp
sp
sp
GS
GS
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 20 k
= 50 ; V
Figure
16.
GS
GS
GS
Figure 1
= 10 V; see
= 10 V; starting at T
= 10 V; see
p
p
N-channel TrenchMOS standard level FET
10 s; see
10 s
D
Figure 2
= 7 A; V
Figure 2
Figure 3
j
DS
and
= 25 C
BUK7880-55A
55 V;
3
[1]
© NXP B.V. 2007. All rights reserved.
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +150
55 +150
55
55
7
5
30
8
7
30
53
-
20
Version
SOT223
2 of 13
Unit
V
V
V
A
A
A
W
A
A
mJ
J
C
C