BUK9215-55A NXP Semiconductors, BUK9215-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9215-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9215-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
300
250
200
150
100
D
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
6
7
2
8
2
9
4
min
V
GS
(V) = 10
typ
6
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03nb61
03aa35
2.2
5
3
(V)
Rev. 02 — 7 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
60
40
20
19
18
17
16
15
14
13
12
11
10
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
3
0
N-channel TrenchMOS logic level FET
20
6
40
BUK9215-55A
9
60
12
© NXP B.V. 2011. All rights reserved.
80
V
GS
I
D
03nb58
03nf85
(V)
(A)
100
15
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