BUK9215-55A NXP Semiconductors, BUK9215-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9215-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9215-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
(V)
GS
22
20
18
16
14
12
10
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
Gate-source voltage as a function of turn-on
20
0
40
20
V
GS
V
DD
(V) = 3.4
= 14 V
60
40
80
V
Q
DD
3.6
G
All information provided in this document is subject to legal disclaimers.
I
(nC)
D
= 44 V
03nb57
03nb62
(A)
4.0
4.2
4.6
5.0
Rev. 02 — 7 February 2011
100
60
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9215-55A
60
60
max
typ
min
120
120
© NXP B.V. 2011. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
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