BUK9217-75B NXP Semiconductors, BUK9217-75B Datasheet - Page 4
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415037/sot428_3d_sml.gif)
BUK9217-75B
Manufacturer Part Number
BUK9217-75B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9217-75B.pdf
(16 pages)
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NXP Semiconductors
BUK9217-75B
Product data sheet
Fig 3.
10
10
(A)
10
I
D
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
DC
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 3 February 2011
10
N-channel TrenchMOS logic level FET
100 μs
10 ms
1 ms
2
t
100 ms
p
= 10 μs
BUK9217-75B
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
03no49
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