BUK9217-75B NXP Semiconductors, BUK9217-75B Datasheet - Page 8

• Manufacturer Part Number: BUK9217-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9217-75B
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
0.0
2.4
1.6
0.8
a
0
−60
−60
junction temperature
factor as a function of junction temperature
Gate-source threshold voltage as a function of
10
10
80
80
max
min
typ
150
150
All information provided in this document is subject to legal disclaimers.
T
T
j
j
( ° C)
(°C)
03no99
03np01
220
Rev. 02 — 3 February 2011
220
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of turn-on
R
(mΩ)
V
DSon
(V)
35
30
25
20
15
10
GS
5
4
3
2
1
0
of drain current; typical values
gate charge; typical values
0
0
V
N-channel TrenchMOS logic level FET
GS
(V) = 3.6
40
10
V
DD
3.8
= 14 V
BUK9217-75B
80
20
4
5
120
30
V
© NXP B.V. 2011. All rights reserved.
DD
Q
10
= 60 V
I
G
D
03no47
03no42
(nC)
(A)
160
40
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