BUK9Y30-75B NXP Semiconductors, BUK9Y30-75B Datasheet - Page 9
BUK9Y30-75B
Manufacturer Part Number
BUK9Y30-75B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9Y30-75B.pdf
(13 pages)
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NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 16. Source current as a function of source-drain voltage; typical values
V
GS
= 0V
(A)
I
S
100
80
60
40
20
0
0
0.3
Rev. 04 — 10 April 2008
T
j
= 175 °C
0.6
T
0.9
j
= 25 °C
V
SD
03no06
(V)
N-channel TrenchMOS logic level FET
1.2
BUK9Y30-75B
© NXP B.V. 2008. All rights reserved.
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