NX2301P NXP Semiconductors, NX2301P Datasheet - Page 10
NX2301P
Manufacturer Part Number
NX2301P
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1.NX2301P.pdf
(16 pages)
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8. Test information
NX2301P
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 October 2010
P
t
1
t
2
duty cycle δ =
20 V, 2 A P-channel Trench MOSFET
006aaa812
t
t
t
1
2
NX2301P
© NXP B.V. 2010. All rights reserved.
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